Behaviour of erbium implanted in InP
Identifieur interne : 000555 ( Main/Exploration ); précédent : 000554; suivant : 000556Behaviour of erbium implanted in InP
Auteurs : RBID : ISTEX:11664_1988_Article_BF02652117.pdfEnglish descriptors
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Abstract
Erbium impurities were implanted in indium phosphide. The 2 K, 77 K and 300 K photoluminescence spectra show, after annealing at high temperature, the main erbium emission centered at 1.536μm. The variation of this Er-peak luminescence is studied as a function of the implanted dose, the annealing temperature and the annealing duration.
DOI: 10.1007/BF02652117
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Rolland</name><affiliation wicri:level="3"><mods:affiliation>Centre National d’Etudes des Télécommunications, LAB/OCM/TOH Route de Trégastel, 22301, Lannion Cedex, France</mods:affiliation><country xml:lang="fr">France</country><wicri:regionArea>Centre National d’Etudes des Télécommunications, LAB/OCM/TOH Route de Trégastel, 22301, Lannion Cedex</wicri:regionArea><placeName><region type="region" nuts="2">Région Bretagne</region><settlement type="city">Lannion</settlement></placeName></affiliation></author><author><name>P. N. Favennec</name><affiliation wicri:level="3"><mods:affiliation>Centre National d’Etudes des Télécommunications, LAB/OCM/TOH Route de Trégastel, 22301, Lannion Cedex, France</mods:affiliation><country xml:lang="fr">France</country><wicri:regionArea>Centre National d’Etudes des Télécommunications, LAB/OCM/TOH Route de Trégastel, 22301, Lannion Cedex</wicri:regionArea><placeName><region type="region" nuts="2">Région Bretagne</region><settlement type="city">Lannion</settlement></placeName></affiliation></author><author><name>B. Lambert</name><affiliation wicri:level="3"><mods:affiliation>Centre National d’Etudes des Télécommunications, LAB/OCM/TOH Route de Trégastel, 22301, Lannion Cedex, France</mods:affiliation><country xml:lang="fr">France</country><wicri:regionArea>Centre National d’Etudes des Télécommunications, LAB/OCM/TOH Route de Trégastel, 22301, Lannion Cedex</wicri:regionArea><placeName><region type="region" nuts="2">Région Bretagne</region><settlement type="city">Lannion</settlement></placeName></affiliation></author><author><name>A. Le Corre</name><affiliation wicri:level="3"><mods:affiliation>Centre National d’Etudes des Télécommunications, LAB/OCM/TOH Route de Trégastel, 22301, Lannion Cedex, France</mods:affiliation><country xml:lang="fr">France</country><wicri:regionArea>Centre National d’Etudes des Télécommunications, LAB/OCM/TOH Route de Trégastel, 22301, Lannion Cedex</wicri:regionArea><placeName><region type="region" nuts="2">Région Bretagne</region><settlement type="city">Lannion</settlement></placeName></affiliation></author><author><name>H. L’Haridon</name><affiliation wicri:level="3"><mods:affiliation>Centre National d’Etudes des Télécommunications, LAB/OCM/TOH Route de Trégastel, 22301, Lannion Cedex, France</mods:affiliation><country xml:lang="fr">France</country><wicri:regionArea>Centre National d’Etudes des Télécommunications, LAB/OCM/TOH Route de Trégastel, 22301, Lannion Cedex</wicri:regionArea><placeName><region type="region" nuts="2">Région Bretagne</region><settlement type="city">Lannion</settlement></placeName></affiliation></author><author><name>M. Salvi</name><affiliation wicri:level="3"><mods:affiliation>Centre National d’Etudes des Télécommunications, LAB/OCM/TOH Route de Trégastel, 22301, Lannion Cedex, France</mods:affiliation><country xml:lang="fr">France</country><wicri:regionArea>Centre National d’Etudes des Télécommunications, LAB/OCM/TOH Route de Trégastel, 22301, Lannion Cedex</wicri:regionArea><placeName><region type="region" nuts="2">Région Bretagne</region><settlement type="city">Lannion</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:11664_1988_Article_BF02652117.pdf</idno><date when="1988">1988</date><idno type="doi">10.1007/BF02652117</idno><idno type="wicri:Area/Main/Corpus">000317</idno><idno type="wicri:Area/Main/Curation">000317</idno><idno type="wicri:Area/Main/Exploration">000555</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Erbium</term><term>InP</term><term>Ion implantation</term><term>Photoluminescence</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">Erbium impurities were implanted in indium phosphide. The 2 K, 77 K and 300 K photoluminescence spectra show, after annealing at high temperature, the main erbium emission centered at 1.536μm. The variation of this Er-peak luminescence is studied as a function of the implanted dose, the annealing temperature and the annealing duration.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="364ab40fa52520724e3f74e357bc09a1394963c2"><titleInfo lang="eng"><title>Behaviour of erbium implanted in InP</title></titleInfo><name type="personal"><namePart type="given">C.</namePart><namePart type="family">Rochaix</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Centre National d’Etudes des Télécommunications, LAB/OCM/TOH Route de Trégastel, 22301, Lannion Cedex, France</affiliation></name><name type="personal"><namePart type="given">A.</namePart><namePart type="family">Rolland</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Centre National d’Etudes des Télécommunications, LAB/OCM/TOH Route de Trégastel, 22301, Lannion Cedex, France</affiliation></name><name type="personal"><namePart type="given">P. N.</namePart><namePart type="family">Favennec</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Centre National d’Etudes des Télécommunications, LAB/OCM/TOH Route de Trégastel, 22301, Lannion Cedex, France</affiliation></name><name type="personal"><namePart type="given">B.</namePart><namePart type="family">Lambert</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Centre National d’Etudes des Télécommunications, LAB/OCM/TOH Route de Trégastel, 22301, Lannion Cedex, France</affiliation></name><name type="personal"><namePart type="given">A.</namePart><namePart type="family">Le Corre</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Centre National d’Etudes des Télécommunications, LAB/OCM/TOH Route de Trégastel, 22301, Lannion Cedex, France</affiliation></name><name type="personal"><namePart type="given">H.</namePart><namePart type="family">L’Haridon</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Centre National d’Etudes des Télécommunications, LAB/OCM/TOH Route de Trégastel, 22301, Lannion Cedex, France</affiliation></name><name type="personal"><namePart type="given">M.</namePart><namePart type="family">Salvi</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Centre National d’Etudes des Télécommunications, LAB/OCM/TOH Route de Trégastel, 22301, Lannion Cedex, France</affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, New York</publisher><dateCreated encoding="w3cdtf">1988-02-18</dateCreated><dateValid encoding="w3cdtf">2007-06-15</dateValid><copyrightDate encoding="w3cdtf">1988</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">Erbium impurities were implanted in indium phosphide. The 2 K, 77 K and 300 K photoluminescence spectra show, after annealing at high temperature, the main erbium emission centered at 1.536μm. The variation of this Er-peak luminescence is studied as a function of the implanted dose, the annealing temperature and the annealing duration.</abstract><subject lang="eng"><genre>Key words</genre><topic>Erbium</topic><topic>InP</topic><topic>ion implantation</topic><topic>photoluminescence</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>JEM</title></titleInfo><titleInfo><title>Journal of Electronic Materials</title><partNumber>Year: 1988</partNumber><partNumber>Volume: 17</partNumber><partNumber>Number: 5</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1988-09-01</dateIssued><copyrightDate encoding="w3cdtf">1988</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Optical and Electronic Materials</topic><topic>Characterization and Evaluation of Materials</topic><topic>Solid State Physics and Spectroscopy</topic><topic>Electronics and Microelectronics, Instrumentation</topic></subject><identifier type="issn">0361-5235</identifier><identifier type="issn">Electronic: 1543-186X</identifier><identifier type="matrixNumber">11664</identifier><identifier type="local">IssueArticleCount: 20</identifier><recordInfo><recordOrigin>The Metallurgical of Society of AIME, 1988</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF02652117</identifier><identifier type="matrixNumber">Art2</identifier><identifier type="local">BF02652117</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>351</start><end>354</end></extent></part><recordInfo><recordOrigin>The Metallurgical of Society of AIME, 1988</recordOrigin><recordIdentifier>11664_1988_Article_BF02652117.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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